A Wide-Operating Range Standard-Cell Based Memory in 28nm FD-SOI

Low voltage logic circuits exploiting gate level dynamic body biasing in 28nm UTBB FD-SOI

In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-oninsulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SO...

A Fully Differential Front End Charge Sampling Amplifier for Medical Ultrasound Imaging in 28nm FD-SOI Technology

5.5 A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply

Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The inverter’s class-AB behavior, together with the high transconductance per quiescent current, results in a high dynamic range per power when optimally biased [3]. The major disadvantage of traditional inverter-based GmC filters is that they are ...

Accurate Small-Signal Modeling of FD-SOI MOSFETs

A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range ...

QDI asynchronous circuits for low power applications: a comparative study in technology FD-SOI 28 nm

P ower consumption is becoming a critical concern in nowadays digital circuits’ design, especially for battery powered portable applications. In this context, asynchronous circuits represent one of the possible solutions for addressing power consumption issues, they can operate correctly at extremely low power supplies and are conceptually robust to PVT variation. This paper evaluates the power...